MOSFETs N-Ch MOS 4A 525V 35W 490pF 1.7 Ohm
Lead Time: 0 Days
Products specifications
| Vds - Drain-Source Breakdown Voltage | 525 V |
| Configuration | Single |
| Technology | Si |
| Rds On - Drain-Source Resistance | 1.7 Ohms |
| Pd - Power Dissipation | 35 W |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Id - Continuous Drain Current | 4 A |
| Transistor Polarity | N-Channel |