TK4A60DB(STA4,Q,M)

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MOSFET N-Ch MOS 3.7A 600V 25W 540pF 2.2 Ohm

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MOSFET N-Ch MOS 3.7A 600V 25W 540pF 2.2 Ohm

Products specifications

Transistor Polarity	N-Channel
Mounting Style	Through Hole
Id - Continuous Drain Current	3.7 A
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Pd - Power Dissipation	25 W
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	2.2 Ohms

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Products specifications

Transistor Polarity	N-Channel
Mounting Style	Through Hole
Id - Continuous Drain Current	3.7 A
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Pd - Power Dissipation	25 W
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	2.2 Ohms