MOSFETs N-Ch FET 600V 2.5s IDSS 10 uA
Lead Time: 0 Days
Products specifications
| Configuration | Single |
| Rds On - Drain-Source Resistance | 1.7 Ohms |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Technology | Si |
| Id - Continuous Drain Current | 4 A |