MOSFETs N-Ch MOS 3.5A 650V 35W 600pF 1.9 Ohm
Products specifications
| Rds On - Drain-Source Resistance | 1.9 Ohms |
| Transistor Polarity | N-Channel |
| Id - Continuous Drain Current | 4 A |
| Technology | Si |
| Number of Channels | 1 Channel |
| Pd - Power Dissipation | 35 W |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Configuration | Single |
| Mounting Style | Through Hole |