TK50E10K3(S1SS-Q)

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MOSFET N-Ch MOS 50A 100V 25W 410pF 0.092

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MOSFET N-Ch MOS 50A 100V 25W 410pF 0.092

Products specifications

Id - Continuous Drain Current	50 A
Rds On - Drain-Source Resistance	92 mOhms
Vds - Drain-Source Breakdown Voltage	100 V
Transistor Polarity	N-Channel
Pd - Power Dissipation	25 W
Number of Channels	1 Channel
Technology	Si
Configuration	Single
Mounting Style	Through Hole

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Products specifications

Id - Continuous Drain Current	50 A
Rds On - Drain-Source Resistance	92 mOhms
Vds - Drain-Source Breakdown Voltage	100 V
Transistor Polarity	N-Channel
Pd - Power Dissipation	25 W
Number of Channels	1 Channel
Technology	Si
Configuration	Single
Mounting Style	Through Hole