TK50J60U(Q)

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MOSFET N-Ch MOS 50A 600V 400W 4050pF 0.065

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MOSFET N-Ch MOS 50A 600V 400W 4050pF 0.065

Products specifications

Number of Channels	1 Channel
Pd - Power Dissipation	400 W
Packaging	Tube
Mounting Style	Through Hole
Configuration	Single
Transistor Polarity	N-Channel
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	65 mOhms
Id - Continuous Drain Current	50 A

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Products specifications

Number of Channels	1 Channel
Pd - Power Dissipation	400 W
Packaging	Tube
Mounting Style	Through Hole
Configuration	Single
Transistor Polarity	N-Channel
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	65 mOhms
Id - Continuous Drain Current	50 A