MOSFETs UMOSVIII 100V 6.5m max(VGS=10V) DPAK
Lead Time: 140 Days
Products specifications
| Configuration | Single |
| Pd - Power Dissipation | 100 W |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Technology | Si |
| Channel Mode | Enhancement |
| Packaging | Cut Tape, MouseReel, Reel |
| Rds On - Drain-Source Resistance | 5.5 mOhms |
| Minimum Operating Temperature | - 55 C |
| Id - Continuous Drain Current | 55 A |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 49 nC |
| Number of Channels | 1 Channel |
| Maximum Operating Temperature | + 175 C |
| Transistor Polarity | N-Channel |