TK56E12N1,S1X

MOSFETs N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC
Lead Time: 112 Days

SKU: TK56E12N1,S1X

Availability: 59 in stock

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

1+

10+

100+

500+

1000+

Price

R 67.67

R 35.88

R 32.30

R 24.63

R 22.50

Free shipping

MOSFETs N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC
Lead Time: 112 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	120 V
Pd - Power Dissipation	168 W
Technology	Si
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Mounting Style	Through Hole
Id - Continuous Drain Current	112 A
Qg - Gate Charge	69 nC
Vgs - Gate-Source Voltage	20 V
Rds On - Drain-Source Resistance	5.8 mOhms
Channel Mode	Enhancement
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	4 V

Your name *

Your email *

Enquiry *

Products specifications

Vds - Drain-Source Breakdown Voltage	120 V
Pd - Power Dissipation	168 W
Technology	Si
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Mounting Style	Through Hole
Id - Continuous Drain Current	112 A
Qg - Gate Charge	69 nC
Vgs - Gate-Source Voltage	20 V
Rds On - Drain-Source Resistance	5.8 mOhms
Channel Mode	Enhancement
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	4 V