MOSFETs N-Ch FET 650V 2.6s IDSS 10 uA 1.2 Ohm
Lead Time: 224 Days
Products specifications
| Transistor Polarity | N-Channel |
| Technology | Si |
| Rds On - Drain-Source Resistance | 1.43 Ohms |
| Mounting Style | Through Hole |
| Id - Continuous Drain Current | 5 A |
| Configuration | Single |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Number of Channels | 1 Channel |