TK6A80E,S4X

MOSFETs PLN MOS 800V 1700m (VGS=10V) TO-220SIS
Lead Time: 112 Days

SKU: TK6A80E,S4X

Availability: 159 in stock

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R 70.74

R 37.94

R 27.43

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MOSFETs PLN MOS 800V 1700m (VGS=10V) TO-220SIS
Lead Time: 112 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Pd - Power Dissipation	45 W
Qg - Gate Charge	32 nC
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	30 V
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	6 A
Mounting Style	Through Hole
Technology	Si
Vds - Drain-Source Breakdown Voltage	800 V
Channel Mode	Enhancement
Configuration	Single
Rds On - Drain-Source Resistance	1.35 Ohms
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Pd - Power Dissipation	45 W
Qg - Gate Charge	32 nC
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	30 V
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	6 A
Mounting Style	Through Hole
Technology	Si
Vds - Drain-Source Breakdown Voltage	800 V
Channel Mode	Enhancement
Configuration	Single
Rds On - Drain-Source Resistance	1.35 Ohms
Transistor Polarity	N-Channel
Number of Channels	1 Channel