TK6P60W,RVQ

MOSFETs N-Ch 9.7A 100W FET 600V 700pF 20nC
Lead Time: 168 Days

SKU: TK6P60W,RVQ

Availability: 5745 in stock

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MOSFETs N-Ch 9.7A 100W FET 600V 700pF 20nC
Lead Time: 168 Days

Products specifications

Id - Continuous Drain Current	6.2 A
Technology	Si
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	820 mOhms
Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	60 W
Vgs - Gate-Source Voltage	10 V
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	2.7 V
Transistor Polarity	N-Channel
Configuration	Single
Qg - Gate Charge	12 nC
Maximum Operating Temperature	+ 150 C

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Products specifications

Id - Continuous Drain Current	6.2 A
Technology	Si
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	820 mOhms
Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	60 W
Vgs - Gate-Source Voltage	10 V
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	2.7 V
Transistor Polarity	N-Channel
Configuration	Single
Qg - Gate Charge	12 nC
Maximum Operating Temperature	+ 150 C