TK6Q60W,S1VQ

MOSFETs DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC
Lead Time: 140 Days

SKU: TK6Q60W,S1VQ

Availability: 197 in stock

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R 67.92

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MOSFETs DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC
Lead Time: 140 Days

Products specifications

Qg - Gate Charge	12 nC
Id - Continuous Drain Current	6.2 A
Technology	Si
Pd - Power Dissipation	60 W
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Tradename	DTMOSIV
Vgs - Gate-Source Voltage	30 V
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	3.7 V
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	680 mOhms
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Configuration	Single

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Products specifications

Qg - Gate Charge	12 nC
Id - Continuous Drain Current	6.2 A
Technology	Si
Pd - Power Dissipation	60 W
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Tradename	DTMOSIV
Vgs - Gate-Source Voltage	30 V
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	3.7 V
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	680 mOhms
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Configuration	Single