TK6Q65W,S1Q

MOSFETs Power MOSFET N-Channel

SKU: TK6Q65W,S1Q

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

1+

10+

75+

525+

1050+

Price

R 56.65

R 25.89

R 22.07

R 18.51

R 16.76

Free shipping

MOSFETs Power MOSFET N-Channel

Products specifications

Channel Mode	Enhancement
Technology	Si
Qg - Gate Charge	11 nC
Rds On - Drain-Source Resistance	890 mOhms
Number of Channels	1 Channel
Configuration	Single
Transistor Polarity	N-Channel
Tradename	DTMOSIV
Vgs th - Gate-Source Threshold Voltage	2.5 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Id - Continuous Drain Current	5.8 A
Vds - Drain-Source Breakdown Voltage	650 V
Pd - Power Dissipation	60 W
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	30 V

Your name *

Your email *

Enquiry *

Products specifications

Channel Mode	Enhancement
Technology	Si
Qg - Gate Charge	11 nC
Rds On - Drain-Source Resistance	890 mOhms
Number of Channels	1 Channel
Configuration	Single
Transistor Polarity	N-Channel
Tradename	DTMOSIV
Vgs th - Gate-Source Threshold Voltage	2.5 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Id - Continuous Drain Current	5.8 A
Vds - Drain-Source Breakdown Voltage	650 V
Pd - Power Dissipation	60 W
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	30 V