TK72E12N1,S1X

MOSFETs N-Ch 120V 179A 225W UMOSVIII 130nC .0044
Lead Time: 112 Days

SKU: TK72E12N1,S1X

Availability: 649 in stock

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R 44.60

R 36.65

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MOSFETs N-Ch 120V 179A 225W UMOSVIII 130nC .0044
Lead Time: 112 Days

Products specifications

Technology	Si
Qg - Gate Charge	130 nC
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	2 V
Vds - Drain-Source Breakdown Voltage	120 V
Channel Mode	Enhancement
Id - Continuous Drain Current	179 A
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	10 V
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	4.4 mOhms
Mounting Style	Through Hole
Pd - Power Dissipation	255 W
Configuration	Single

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Products specifications

Technology	Si
Qg - Gate Charge	130 nC
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	2 V
Vds - Drain-Source Breakdown Voltage	120 V
Channel Mode	Enhancement
Id - Continuous Drain Current	179 A
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	10 V
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	4.4 mOhms
Mounting Style	Through Hole
Pd - Power Dissipation	255 W
Configuration	Single