MOSFETs N-Ch TT-MOSIX 600V 40W 1130pF 10A
Lead Time: 112 Days
Products specifications
| Rds On - Drain-Source Resistance | 750 mOhms |
| Pd - Power Dissipation | 40 W |
| Transistor Polarity | N-Channel |
| Qg - Gate Charge | 30 nC |
| Id - Continuous Drain Current | 10 A |
| Packaging | Tube |
| Mounting Style | Through Hole |
| Vgs - Gate-Source Voltage | 30 V |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Technology | Si |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Minimum Operating Temperature | - |
| Maximum Operating Temperature | + 150 C |
| Number of Channels | 1 Channel |
| Channel Mode | Enhancement |
| Configuration | Single |