TK8A50D(STA4,Q,M)

MOSFETs N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm
Lead Time: 224 Days

SKU: TK8A50D(STA4,Q,M)

Availability: 337 in stock

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R 53.06

R 26.91

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R 20.61

R 16.25

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MOSFETs N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm
Lead Time: 224 Days

Products specifications

Configuration	Single
Technology	Si
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	500 V
Rds On - Drain-Source Resistance	850 mOhms
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	10 V
Tradename	DTMOSIV
Pd - Power Dissipation	40 W
Qg - Gate Charge	16 nC
Transistor Polarity	N-Channel
Id - Continuous Drain Current	8 A

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Products specifications

Configuration	Single
Technology	Si
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	500 V
Rds On - Drain-Source Resistance	850 mOhms
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	10 V
Tradename	DTMOSIV
Pd - Power Dissipation	40 W
Qg - Gate Charge	16 nC
Transistor Polarity	N-Channel
Id - Continuous Drain Current	8 A