MOSFETs N-Ch FET 650V 4.5s IDSS 10 uA 0.7 Ohm
Lead Time: 224 Days
Products specifications
| Configuration | Single |
| Rds On - Drain-Source Resistance | 840 mOhms |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Technology | Si |
| Id - Continuous Drain Current | 8 A |
| Tradename | DTMOSIV |