TK8Q60W,S1VQ

MOSFETs DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC

SKU: TK8Q60W,S1VQ

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R 87.92

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R 34.86

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MOSFETs DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC

Products specifications

Technology	Si
Pd - Power Dissipation	80 W
Number of Channels	1 Channel
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	3.7 V
Vds - Drain-Source Breakdown Voltage	600 V
Transistor Polarity	N-Channel
Tradename	DTMOSIV
Rds On - Drain-Source Resistance	420 mOhms
Vgs - Gate-Source Voltage	30 V
Qg - Gate Charge	18.5 nC
Configuration	Single
Id - Continuous Drain Current	8 A

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Products specifications

Technology	Si
Pd - Power Dissipation	80 W
Number of Channels	1 Channel
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	3.7 V
Vds - Drain-Source Breakdown Voltage	600 V
Transistor Polarity	N-Channel
Tradename	DTMOSIV
Rds On - Drain-Source Resistance	420 mOhms
Vgs - Gate-Source Voltage	30 V
Qg - Gate Charge	18.5 nC
Configuration	Single
Id - Continuous Drain Current	8 A