MOSFETs N-Ch 60V 1990pF 29nC 50A 34W
Lead Time: 161 Days
Products specifications
| Id - Continuous Drain Current | 50 A |
| Configuration | Single |
| Technology | Si |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 36 W |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Channel Mode | Enhancement |
| Qg - Gate Charge | 28.3 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Rds On - Drain-Source Resistance | 6.1 mOhms |
| Mounting Style | Through Hole |