TK9A90E,S4X

MOSFETs PLN MOS 900V 1300m (VGS=10V) TO-220SIS
Lead Time: 182 Days

SKU: TK9A90E,S4X

Availability: 313 in stock

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R 85.35

R 41.78

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R 29.73

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MOSFETs PLN MOS 900V 1300m (VGS=10V) TO-220SIS
Lead Time: 182 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	900 V
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	9 A
Transistor Polarity	N-Channel
Configuration	Single
Rds On - Drain-Source Resistance	1 Ohms
Qg - Gate Charge	46 nC
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	4 V
Pd - Power Dissipation	50 W
Technology	Si
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	30 V

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Products specifications

Vds - Drain-Source Breakdown Voltage	900 V
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	9 A
Transistor Polarity	N-Channel
Configuration	Single
Rds On - Drain-Source Resistance	1 Ohms
Qg - Gate Charge	46 nC
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	4 V
Pd - Power Dissipation	50 W
Technology	Si
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	30 V