TPC6009-H(TE85L,FM

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MOSFET N-Ch 40V FET 5.3A 2.2W 225pF

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MOSFET N-Ch 40V FET 5.3A 2.2W 225pF

Products specifications

Pd - Power Dissipation	2.2 W
Rds On - Drain-Source Resistance	98 mOhms
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	40 V
Technology	Si
Configuration	Single
Id - Continuous Drain Current	5.3 A
Number of Channels	1 Channel
Transistor Polarity	N-Channel

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Products specifications

Pd - Power Dissipation	2.2 W
Rds On - Drain-Source Resistance	98 mOhms
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	40 V
Technology	Si
Configuration	Single
Id - Continuous Drain Current	5.3 A
Number of Channels	1 Channel
Transistor Polarity	N-Channel