TPC6011(TE85L,F,M)

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MOSFET N-Ch 30V FET 6A 2.2W 640pF

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MOSFET N-Ch 30V FET 6A 2.2W 640pF

Products specifications

Id - Continuous Drain Current	6 A
Technology	Si
Pd - Power Dissipation	2.2 W
Rds On - Drain-Source Resistance	32 mOhms
Vds - Drain-Source Breakdown Voltage	30 V
Packaging	Reel
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Id - Continuous Drain Current	6 A
Technology	Si
Pd - Power Dissipation	2.2 W
Rds On - Drain-Source Resistance	32 mOhms
Vds - Drain-Source Breakdown Voltage	30 V
Packaging	Reel
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel