TPC6012(TE85L,F,M)

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MOSFET N-Ch 20V FET 6A 2.2W 630pF

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MOSFET N-Ch 20V FET 6A 2.2W 630pF

Products specifications

Technology	Si
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	38 mOhms
Id - Continuous Drain Current	6 A
Configuration	Single
Packaging	Reel
Pd - Power Dissipation	2.2 W
Vds - Drain-Source Breakdown Voltage	20 V

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Products specifications

Technology	Si
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	38 mOhms
Id - Continuous Drain Current	6 A
Configuration	Single
Packaging	Reel
Pd - Power Dissipation	2.2 W
Vds - Drain-Source Breakdown Voltage	20 V