TPC6110(TE85L,F,M)

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MOSFET N-Ch -30V FET 2.2W -4.5A 510pF

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MOSFET N-Ch -30V FET 2.2W -4.5A 510pF

Products specifications

Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	2.2 W
Rds On - Drain-Source Resistance	77 mOhms
Technology	Si
Configuration	Single
Id - Continuous Drain Current	4.5 A
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Transistor Polarity	P-Channel

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Products specifications

Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	2.2 W
Rds On - Drain-Source Resistance	77 mOhms
Technology	Si
Configuration	Single
Id - Continuous Drain Current	4.5 A
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Transistor Polarity	P-Channel