MOSFET N-Ch 30V FET 11A 1.9W 1100pF
Products specifications
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Rds On - Drain-Source Resistance | 19 mOhms |
| Pd - Power Dissipation | 1.9 W |
| Technology | Si |
| Configuration | Single |
| Packaging | Reel |
| Id - Continuous Drain Current | 11 A |
| Vds - Drain-Source Breakdown Voltage | 30 V |