TPCA8065-H,LQ(S

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MOSFET N-Ch 30V FET 16A 25W 1350pF 20nC

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MOSFET N-Ch 30V FET 16A 25W 1350pF 20nC

Products specifications

Technology	Si
Qg - Gate Charge	20 nC
Id - Continuous Drain Current	16 A
Vds - Drain-Source Breakdown Voltage	30 V
Rds On - Drain-Source Resistance	14.5 mOhms
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	25 W
Number of Channels	1 Channel
Transistor Polarity	N-Channel

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Products specifications

Technology	Si
Qg - Gate Charge	20 nC
Id - Continuous Drain Current	16 A
Vds - Drain-Source Breakdown Voltage	30 V
Rds On - Drain-Source Resistance	14.5 mOhms
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	25 W
Number of Channels	1 Channel
Transistor Polarity	N-Channel