TPCA8120,LQ(CM

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MOSFET N-Ch -30V FET 2.8W -45.A 1650pF

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MOSFET N-Ch -30V FET 2.8W -45.A 1650pF

Products specifications

Rds On - Drain-Source Resistance	4 mOhms
Pd - Power Dissipation	2.8 W
Technology	Si
Configuration	Single
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Packaging	Cut Tape, MouseReel, Reel
Transistor Polarity	P-Channel
Id - Continuous Drain Current	45 A

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Products specifications

Rds On - Drain-Source Resistance	4 mOhms
Pd - Power Dissipation	2.8 W
Technology	Si
Configuration	Single
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Packaging	Cut Tape, MouseReel, Reel
Transistor Polarity	P-Channel
Id - Continuous Drain Current	45 A