TPCC8066-H,LQ(S

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MOSFET N-Ch 30V FET 11A 17W 1100pF 15nC

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MOSFET N-Ch 30V FET 11A 17W 1100pF 15nC

Products specifications

Packaging	Reel
Vds - Drain-Source Breakdown Voltage	30 V
Rds On - Drain-Source Resistance	19 mOhms
Technology	Si
Qg - Gate Charge	15 nC
Pd - Power Dissipation	17 W
Transistor Polarity	N-Channel
Id - Continuous Drain Current	11 A
Number of Channels	1 Channel
Configuration	Single

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Products specifications

Packaging	Reel
Vds - Drain-Source Breakdown Voltage	30 V
Rds On - Drain-Source Resistance	19 mOhms
Technology	Si
Qg - Gate Charge	15 nC
Pd - Power Dissipation	17 W
Transistor Polarity	N-Channel
Id - Continuous Drain Current	11 A
Number of Channels	1 Channel
Configuration	Single