TPH2R506PL,L1Q

MOSFETs N-Ch 60V 4180pF 60nC 160A 132W
Lead Time: 126 Days

SKU: TPH2R506PL,L1Q

Availability: 9454 in stock

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MOSFETs N-Ch 60V 4180pF 60nC 160A 132W
Lead Time: 126 Days

Products specifications

Technology	Si
Vgs th - Gate-Source Threshold Voltage	1.5 V
Pd - Power Dissipation	132 W
Rds On - Drain-Source Resistance	1.9 mOhms
Vds - Drain-Source Breakdown Voltage	60 V
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Id - Continuous Drain Current	160 A
Maximum Operating Temperature	+ 175 C
Configuration	Single
Number of Channels	1 Channel
Qg - Gate Charge	60 nC

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Products specifications

Technology	Si
Vgs th - Gate-Source Threshold Voltage	1.5 V
Pd - Power Dissipation	132 W
Rds On - Drain-Source Resistance	1.9 mOhms
Vds - Drain-Source Breakdown Voltage	60 V
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Id - Continuous Drain Current	160 A
Maximum Operating Temperature	+ 175 C
Configuration	Single
Number of Channels	1 Channel
Qg - Gate Charge	60 nC