TPH8R80ANH,L1Q

MOSFETs N-Ch 120V 59A 61W UMOSVIII 2180pF 33nC
Lead Time: 112 Days

SKU: TPH8R80ANH,L1Q

Availability: 8998 in stock

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R 43.83

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R 21.33

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MOSFETs N-Ch 120V 59A 61W UMOSVIII 2180pF 33nC
Lead Time: 112 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	100 V
Pd - Power Dissipation	61 W
Channel Mode	Enhancement
Configuration	Single
Transistor Polarity	N-Channel
Qg - Gate Charge	33 nC
Number of Channels	1 Channel
Technology	Si
Rds On - Drain-Source Resistance	7.4 mOhms
Id - Continuous Drain Current	59 A
Vgs th - Gate-Source Threshold Voltage	4 V
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V

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Products specifications

Vds - Drain-Source Breakdown Voltage	100 V
Pd - Power Dissipation	61 W
Channel Mode	Enhancement
Configuration	Single
Transistor Polarity	N-Channel
Qg - Gate Charge	33 nC
Number of Channels	1 Channel
Technology	Si
Rds On - Drain-Source Resistance	7.4 mOhms
Id - Continuous Drain Current	59 A
Vgs th - Gate-Source Threshold Voltage	4 V
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V