TPN1110ENH,L1Q

MOSFETs UMOSVIII 200V 126m (VGS=10V) TSON-ADV
Lead Time: 112 Days

SKU: TPN1110ENH,L1Q

Availability: 4985 in stock

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MOSFETs UMOSVIII 200V 126m (VGS=10V) TSON-ADV
Lead Time: 112 Days

Products specifications

Transistor Polarity	N-Channel
Packaging	Reel
Id - Continuous Drain Current	13 A
Minimum Operating Temperature	- 55 C
Technology	Si
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	7 nC
Channel Mode	Enhancement
Configuration	Triple
Rds On - Drain-Source Resistance	96 mOhms
Vds - Drain-Source Breakdown Voltage	200 V
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	39 W

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Products specifications

Transistor Polarity	N-Channel
Packaging	Reel
Id - Continuous Drain Current	13 A
Minimum Operating Temperature	- 55 C
Technology	Si
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	7 nC
Channel Mode	Enhancement
Configuration	Triple
Rds On - Drain-Source Resistance	96 mOhms
Vds - Drain-Source Breakdown Voltage	200 V
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	39 W