MOSFETs POWER MOSFET TRANSISTOR PD=170W
Lead Time: 140 Days
Products specifications
| Configuration | Single |
| Pd - Power Dissipation | 170 W |
| Qg - Gate Charge | 122 nC |
| Vds - Drain-Source Breakdown Voltage | 45 V |
| Rds On - Drain-Source Resistance | 1.65 mOhms |
| Number of Channels | 1 Channel |
| Packaging | Cut Tape, MouseReel, Reel |
| Channel Mode | Enhancement |
| Transistor Polarity | N-Channel |
| Technology | Si |
| Id - Continuous Drain Current | 300 A |