TPW1R306PL,L1Q

MOSFETs POWER MOSFET TRANSISTOR PD=170W
Lead Time: 140 Days

SKU: TPW1R306PL,L1Q

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R 86.64

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R 31.78

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MOSFETs POWER MOSFET TRANSISTOR PD=170W

Products specifications

Rds On - Drain-Source Resistance	1.29 mOhms
Configuration	Single
Qg - Gate Charge	91 nC
Pd - Power Dissipation	170 W
Channel Mode	Enhancement
Number of Channels	1 Channel
Id - Continuous Drain Current	260 A
Transistor Polarity	N-Channel
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	60 V

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Products specifications

Rds On - Drain-Source Resistance	1.29 mOhms
Configuration	Single
Qg - Gate Charge	91 nC
Pd - Power Dissipation	170 W
Channel Mode	Enhancement
Number of Channels	1 Channel
Id - Continuous Drain Current	260 A
Transistor Polarity	N-Channel
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	60 V