2N7002PSZ

MOSFETs SOT363 2NCH 60V .32A

SKU: 2N7002PSZ

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MOSFETs SOT363 2NCH 60V .32A

Products specifications

Technology	Si
Vds - Drain-Source Breakdown Voltage	60 V
Rds On - Drain-Source Resistance	1.6 Ohms
Qg - Gate Charge	0.8 nC
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	320 mA
Number of Channels	2 Channel
Vgs th - Gate-Source Threshold Voltage	1.1 V
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Configuration	Dual
Pd - Power Dissipation	420 mW

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Products specifications

Technology	Si
Vds - Drain-Source Breakdown Voltage	60 V
Rds On - Drain-Source Resistance	1.6 Ohms
Qg - Gate Charge	0.8 nC
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	320 mA
Number of Channels	2 Channel
Vgs th - Gate-Source Threshold Voltage	1.1 V
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Configuration	Dual
Pd - Power Dissipation	420 mW