A2G22S190-01SR3

RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V

SKU: A2G22S190-01SR3

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Quantity

250+

Price

R 1,863.45

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RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V

Products specifications

Gain	16.5 dB
Technology	GaN Si
Packaging	Reel
Maximum Operating Temperature	+ 150 C
Product Type	RF MOSFET Transistors
Id - Continuous Drain Current	19 mA
Vds - Drain-Source Breakdown Voltage	150 V
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel

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Products specifications

Gain	16.5 dB
Technology	GaN Si
Packaging	Reel
Maximum Operating Temperature	+ 150 C
Product Type	RF MOSFET Transistors
Id - Continuous Drain Current	19 mA
Vds - Drain-Source Breakdown Voltage	150 V
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel