A2T08VD021NT1

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RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 728 960 MHz, 2 W Avg., 48 V

SKU: A2T08VD021NT1

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RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 728 960 MHz, 2 W Avg., 48 V

Products specifications

Technology	Si
Gain	19.1 dB
Maximum Operating Temperature	+ 150 C
Output Power	2 W
Vds - Drain-Source Breakdown Voltage	- 500 mV, 105 V
Transistor Polarity	Dual N-Channel
Product Type	RF MOSFET Transistors
Id - Continuous Drain Current	80 mA
Minimum Operating Temperature	- 40 C

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Products specifications

Technology	Si
Gain	19.1 dB
Maximum Operating Temperature	+ 150 C
Output Power	2 W
Vds - Drain-Source Breakdown Voltage	- 500 mV, 105 V
Transistor Polarity	Dual N-Channel
Product Type	RF MOSFET Transistors
Id - Continuous Drain Current	80 mA
Minimum Operating Temperature	- 40 C