RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-2200 MHz, 107 W Avg., 48 V
Products specifications
|
Gain
|
15.4 dB |
|
Maximum Operating Temperature
|
+ 150 C |
|
Output Power
|
107 W |
|
Minimum Operating Temperature
|
- 55 C |
|
Transistor Polarity
|
Dual N-Channel |
|
Vds - Drain-Source Breakdown Voltage
|
125 V |
|
Id - Continuous Drain Current
|
200 mA |
|
Technology
|
Si |
|
Product Type
|
RF MOSFET Transistors |