RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-2200 MHz, 107 W Avg., 48 V
Products specifications
| Gain | 15.4 dB |
| Maximum Operating Temperature | + 150 C |
| Output Power | 107 W |
| Minimum Operating Temperature | - 55 C |
| Transistor Polarity | Dual N-Channel |
| Vds - Drain-Source Breakdown Voltage | 125 V |
| Id - Continuous Drain Current | 200 mA |
| Technology | Si |
| Product Type | RF MOSFET Transistors |