RF MOSFET Transistors RF Power GaN Trnsitr 1805-2200 MHz 79W48
Products specifications
|
Transistor Polarity
|
Dual N-Channel |
|
Vds - Drain-Source Breakdown Voltage
|
150 V |
|
Gain
|
15.3 dB |
|
Id - Continuous Drain Current
|
29.7 mA |
|
Product Type
|
RF MOSFET Transistors |
|
Output Power
|
79 W |
|
Technology
|
GaN |
|
Minimum Operating Temperature
|
- 55 C |
|
Maximum Operating Temperature
|
+ 150 C |