A3G22H400-04SR3

RF MOSFET Transistors RF Power GaN Trnsitr 1805-2200 MHz 79W48

SKU: A3G22H400-04SR3

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Quantity

250+

Price

R 2,711.61

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RF MOSFET Transistors RF Power GaN Trnsitr 1805-2200 MHz 79W48

Products specifications

Transistor Polarity	Dual N-Channel
Vds - Drain-Source Breakdown Voltage	150 V
Gain	15.3 dB
Id - Continuous Drain Current	29.7 mA
Product Type	RF MOSFET Transistors
Output Power	79 W
Technology	GaN
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C

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Products specifications

Transistor Polarity	Dual N-Channel
Vds - Drain-Source Breakdown Voltage	150 V
Gain	15.3 dB
Id - Continuous Drain Current	29.7 mA
Product Type	RF MOSFET Transistors
Output Power	79 W
Technology	GaN
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C