RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 71 W Avg., 28 V
Products specifications
| Maximum Operating Temperature | + 150 C |
| Packaging | Reel |
| Technology | Si |
| Id - Continuous Drain Current | 3.2 A |
| Transistor Polarity | Dual N-Channel |
| Minimum Operating Temperature | - 40 C |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 65 V |
| Product Type | RF MOSFET Transistors |