RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W AVG., 28 V
Products specifications
| Gain | 20.9 dB |
| Output Power | 1.26 W |
| Transistor Polarity | N-Channel |
| Id - Continuous Drain Current | 154 mA |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 65 V |
| Product Type | RF MOSFET Transistors |
| Technology | Si |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 40 C |