AFV10700GSR5

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V

SKU: AFV10700GSR5

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50+

Price

R 19,613.61

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RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V

Products specifications

Output Power	700 W
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	- 500 mV, 105 V
Technology	Si
Transistor Polarity	Dual N-Channel
Gain	19.2 dB
Product Type	RF MOSFET Transistors
Id - Continuous Drain Current	2.6 A

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Products specifications

Output Power	700 W
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	- 500 mV, 105 V
Technology	Si
Transistor Polarity	Dual N-Channel
Gain	19.2 dB
Product Type	RF MOSFET Transistors
Id - Continuous Drain Current	2.6 A