BF556A,235

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RF JFET Transistors N-Channel Single '+/- 30V 7mA

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RF JFET Transistors N-Channel Single '+/- 30V 7mA

Products specifications

Vgs - Gate-Source Breakdown Voltage	30 V
Transistor Type	JFET
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Technology	Si
Vds - Drain-Source Breakdown Voltage	30 V
Pd - Power Dissipation	250 mW
Id - Continuous Drain Current	7 mA
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Vgs - Gate-Source Breakdown Voltage	30 V
Transistor Type	JFET
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Technology	Si
Vds - Drain-Source Breakdown Voltage	30 V
Pd - Power Dissipation	250 mW
Id - Continuous Drain Current	7 mA
Packaging	Cut Tape, MouseReel, Reel