RF JFET Transistors N-Channel Single '+/- 25V 5mA
Products specifications
|
Pd - Power Dissipation
|
250 mW |
|
Technology
|
Si |
|
Transistor Polarity
|
N-Channel |
|
Vgs - Gate-Source Breakdown Voltage
|
25 V |
|
Packaging
|
Cut Tape, MouseReel, Reel |
|
Product Type
|
RF JFET Transistors |
|
Vds - Drain-Source Breakdown Voltage
|
25 V |
|
Transistor Type
|
JFET |
|
Id - Continuous Drain Current
|
5 mA |