RF JFET Transistors N-Channel Single '+/- 25V 5mA
Products specifications
| Pd - Power Dissipation | 250 mW |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Breakdown Voltage | 25 V |
| Packaging | Cut Tape, MouseReel, Reel |
| Product Type | RF JFET Transistors |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Transistor Type | JFET |
| Id - Continuous Drain Current | 5 mA |