BFU530WX

RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
Lead Time: 693 Days

SKU: BFU530WX

Availability: 24836 in stock

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RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
Lead Time: 693 Days

Products specifications

Product Type	RF Bipolar Transistors
Output Power	10 dBm
Technology	Si
Collector- Emitter Voltage VCEO Max	16 V
Transistor Polarity	NPN
Maximum Operating Temperature	+ 150 C
Transistor Type	Bipolar Wideband
Emitter- Base Voltage VEBO	2 V
Continuous Collector Current	10 mA
Configuration	Single
Minimum Operating Temperature	- 40 C

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Products specifications

Product Type	RF Bipolar Transistors
Output Power	10 dBm
Technology	Si
Collector- Emitter Voltage VCEO Max	16 V
Transistor Polarity	NPN
Maximum Operating Temperature	+ 150 C
Transistor Type	Bipolar Wideband
Emitter- Base Voltage VEBO	2 V
Continuous Collector Current	10 mA
Configuration	Single
Minimum Operating Temperature	- 40 C