BFU668F,115

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Bipolar Transistors - BJT NPN wideband silicon RF transistor

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Bipolar Transistors - BJT NPN wideband silicon RF transistor

Products specifications

Gain Bandwidth Product fT	20 GHz
Collector- Emitter Voltage VCEO Max	5.5 V
Transistor Polarity	NPN
Technology	Si
Maximum Operating Temperature	+ 150 C
Configuration	Dual
Emitter- Base Voltage VEBO	2.5 V
Collector- Base Voltage VCBO	16 V

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Products specifications

Gain Bandwidth Product fT	20 GHz
Collector- Emitter Voltage VCEO Max	5.5 V
Transistor Polarity	NPN
Technology	Si
Maximum Operating Temperature	+ 150 C
Configuration	Dual
Emitter- Base Voltage VEBO	2.5 V
Collector- Base Voltage VCBO	16 V