RF MOSFET Transistors 50V GaN on Sic 90W CW 3MHz-1GHz
Products specifications
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 125 V |
| Output Power | 125 W |
| Product Type | RF MOSFET Transistors |
| Id - Continuous Drain Current | 200 mA |
| Technology | GaN SiC |