MRF101AN

RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
Lead Time: 70 Days

SKU: MRF101AN

Availability: 3732 in stock

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R 1,075.78

R 799.46

R 749.22

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RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
Lead Time: 70 Days

Products specifications

Product Type	RF MOSFET Transistors
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	133 V
Technology	Si
Output Power	100 W
Transistor Polarity	N-Channel
Id - Continuous Drain Current	8.8 A
Mounting Style	Through Hole
Gain	21.1 dB

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Products specifications

Product Type	RF MOSFET Transistors
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	133 V
Technology	Si
Output Power	100 W
Transistor Polarity	N-Channel
Id - Continuous Drain Current	8.8 A
Mounting Style	Through Hole
Gain	21.1 dB