RF MOSFET Transistors RF Power LDMOS Transistor 750 W CW over 700-1300 MHz, 50 V
Products specifications
| Product Type | RF MOSFET Transistors |
| Gain | 20.5 dB |
| Id - Continuous Drain Current | 2.8 A |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 105 V |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 40 C |
| Transistor Polarity | Dual N-Channel |
| Output Power | 750 W |
| Technology | Si |