Sub-GHz Development Tools MRFE6VP6300-88
Lead Time: 1 Days
Products specifications
| Vds - Drain-Source Breakdown Voltage | 130 V |
| Technology | Si |
| Gain | 26.5 dB |
| Transistor Polarity | N-Channel |
| Product Type | RF Development Tools, RF MOSFET Transistors |
| Maximum Operating Temperature | + 150 C |