MRFE8VP8600HSR5

RF MOSFET Transistors 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor

SKU: MRFE8VP8600HSR5

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Quantity

50+

Price

R 5,492.68

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RF MOSFET Transistors 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor

Products specifications

Vds - Drain-Source Breakdown Voltage	- 500 mV, 115 V
Minimum Operating Temperature	- 40 C
Gain	21 dB
Output Power	140 W
Technology	Si
Transistor Polarity	Dual N-Channel
Id - Continuous Drain Current	2.8 A
Product Type	RF MOSFET Transistors
Maximum Operating Temperature	+ 150 C

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Products specifications

Vds - Drain-Source Breakdown Voltage	- 500 mV, 115 V
Minimum Operating Temperature	- 40 C
Gain	21 dB
Output Power	140 W
Technology	Si
Transistor Polarity	Dual N-Channel
Id - Continuous Drain Current	2.8 A
Product Type	RF MOSFET Transistors
Maximum Operating Temperature	+ 150 C